Arrangements for magnetic field sensors that act as movement detectors

ABSTRACT

Magnetic field sensors can sense speed of movement and direction of movement of a ferromagnetic object. The magnetic field sensors employ both planar Hall effect elements and vertical Hall effect elements to generate two-state signals in two different signal paths with relative phases that are ninety degrees apart, the ninety degrees having sufficient margin to aid in detection of the direction of motion. Other magnetic field sensors use at least four vertical Hall effect elements to identify a speed of rotation and a direction of rotation of a moving ferromagnetic object.

CROSS REFERENCE TO RELATED APPLICATIONS

Not Applicable.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH

Not Applicable.

FIELD

This invention relates generally to magnetic field sensors, and, more particularly, to magnetic field sensors having a magnet and a substrate with magnetic field sensing elements thereupon, all arranged in a variety of relative positions and all acting as movement detectors.

BACKGROUND

Various types of magnetic field sensing elements are known, including Hall Effect elements and magnetoresistance elements. Magnetic field sensors generally include a magnetic field sensing element and other electronic components. Some magnetic field sensors also include a permanent magnet in a so-called “back biased” arrangement described more fully below.

Magnetic field sensors provide an electrical signal representative of a sensed magnetic field. In some embodiments that have the magnet in a so-called back-biased arrangement, a magnetic field sensed by a magnetic field sensor is a magnetic field generated by the magnet.

In these back-biased arrangements, in the presence of a moving ferromagnetic object, the magnetic field generated by the magnet and sensed by the magnetic field sensor varies in accordance with a shape or profile of the moving ferromagnetic object.

In some arrangements, the ferromagnetic object that is sensed can have teeth, as in gear teeth upon a gear. With these arrangements, passing gear teeth are sensed and by the magnetic field sensor, a rate of which can be indicative of a speed of rotation of the gear. An output signal from the magnetic field sensor can indicate the speed of the rotation.

With some arrangements, the output signal from the magnetic field sensor can also indicate a direction of the rotation.

Where the gear is attached to a target object, for example, a shaft, the output signal from the magnetic field sensor can be indicative of the speed of rotation of the target object and/or the direction of rotation of the target object.

Magnetic field sensing elements, e.g., Hall effect elements, can be used to sense the varying magnetic field in response to passing ferromagnetic object, e.g., a rotating gear. In some arrangements, a relative phase of signals generated by two or more of the magnetic field sensing elements is used to detect the direction of rotation of the ferromagnetic object, e.g., the gear. Thus, it will be apparent that a small relative phase difference, particularly in the presence of electrical or magnetic noise, can result in errors in the detection of the direction of rotation.

It would be desirable to provide a magnetic field sensor in a back-biased arrangement that can achieve an output signal that accurately differentiates between two directions of rotation of a ferromagnetic object to provide a detected direction, with reduced susceptibility to errors in the detected direction.

SUMMARY

The present inventions provides a magnetic field sensor and associate method in a back-biased arrangement that can achieve an output signal that accurately differentiates between two directions of rotation of a ferromagnetic object, or directions of any movement of a ferromagnetic object, to provide a detected direction, with reduced susceptibility to errors in the detected direction.

In accordance with an example useful for understanding an aspect of the present invention, a magnetic field sensor for sensing a movement of an object along a path, a movement line tangent to the path, can include a magnet, the magnet comprising a north pole, a south pole, and a magnet axis passing through the north pole and the south pole. The magnetic field sensor can also include a semiconductor substrate proximate to the magnet and at a position between the object and the magnet planar surface, the semiconductor substrate having first and second major opposing surfaces, the magnet axis substantially perpendicular to the first opposing surface of the semiconductor substrate, the semiconductor substrate having first and second orthogonal axes on the first opposing surface of the substrate intersecting at a substrate point on the first surface of the substrate, wherein the magnet axis intersects the substrate point, wherein a projection of the movement line onto the first opposing surface of the semiconductor substrate is substantially parallel to the first orthogonal axis on the first surface of the substrate. The magnetic field sensor can also include a first magnetic field sensing element disposed on or under the first surface of the semiconductor substrate and disposed along the first or second orthogonal axis, wherein the first magnetic field sensing element comprises an axis of maximum sensitivity substantially perpendicular to the first opposing surface of the substrate. The magnetic field sensor can also include a second magnetic field sensing element disposed on or under the first surface of the semiconductor substrate and disposed along the first or second orthogonal axis, wherein the second magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate, wherein the axis of maximum sensitivity of the second magnetic field sensing element is substantially parallel to the first orthogonal axis, wherein the first magnetic field sensing element is not disposed over or under the second magnetic field sensing element relative to the first surface of the semiconductor substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing features of the invention, as well as the invention itself may be more fully understood from the following detailed description of the drawings, in which:

FIG. 1 is a block diagram showing a prior art magnetic field sensor proximate to a gear operable to rotate;

FIG. 2 is a block diagram showing a prior art electronic circuit that can be used in the prior art magnetic field sensor of FIG. 1;

FIG. 3 is a graph showing particular signals within the prior art electronic circuit of FIG. 2;

FIG. 4 is a block diagram showing a side view of another magnetic field sensor having a semiconductor substrate proximate to a gear operable to rotate;

FIG. 5 is a block diagram showing a top view of an illustrative substrate portion of a magnetic field sensor according to FIG. 4 and having two magnetic field sensing elements and an electronic circuit;

FIG. 6 is a block diagram showing a top view of an illustrative substrate portion of a magnetic field sensor according to FIG. 4 and having four magnetic field sensing elements and an electronic circuit;

FIG. 7 is a block diagram showing a side view of a magnetic field sensor according to the substrate portion of the magnetic field sensor of FIG. 5 and showing an effect upon magnetic field lines as a ferromagnetic object passes;

FIG. 8 is a block diagram showing a side view of a magnetic field sensor according to the substrate portion of the magnetic field sensor of FIG. 6 and showing an effect upon magnetic field lines as a ferromagnetic object passes;

FIG. 9 is a block diagram showing magnetic field lines, planar Hall effect elements, and vertical Hall effect elements;

FIG. 10 is a graph showing particular signals within the electronic circuits of FIGS. 5 and 6;

FIG. 11 is a block diagram showing further details of an example of the electronic circuit of FIG. 5;

FIG. 12 is a block diagram showing further details of an example of the electronic circuit of FIG. 6;

FIG. 13 is a block diagram showing a top view of an illustrative substrate portion of a magnetic field sensor according to FIG. 4 and having six magnetic field sensing elements and an electronic circuit;

FIG. 14 is a block diagram showing further details of an example of the electronic circuit of FIG. 13;

FIG. 15 is a block diagram showing a top view of an illustrative substrate portion of a magnetic field sensor according to FIG. 4 and having four magnetic field sensing elements and an electronic circuit;

FIG. 16 is a block diagram showing further details of an example of the electronic circuit of FIG. 15; and

FIG. 17 is a block diagram showing two magnetoresistance elements coupled in a bridge arrangement that can be used in the magnetic field sensors and electronic circuits of FIGS. 4-9, and 11-16.

DETAILED DESCRIPTION

Before describing the present invention, some introductory concepts and terminology are explained.

As used herein, the term “magnetic field sensing element” is used to describe a variety of electronic elements that can sense a magnetic field. The magnetic field sensing element can be, but is not limited to, a Hall Effect element, a magnetoresistance element, or a magnetotransistor. As is known, there are different types of Hall Effect elements, for example, a planar Hall element, a vertical Hall element, and a Circular Vertical Hall (CVH) element. As is also known, there are different types of magnetoresistance elements, for example, a semiconductor magnetoresistance element such as Indium Antimonide (InSb), a giant magnetoresistance (GMR) element, an anisotropic magnetoresistance element (AMR), a tunneling magnetoresistance (TMR) element, and a magnetic tunnel junction (MTJ). The magnetic field sensing element may be a single element or, alternatively, may include two or more magnetic field sensing elements arranged in various configurations, e.g., a half bridge or full (Wheatstone) bridge. Depending on the device type and other application requirements, the magnetic field sensing element may be a device made of a type IV semiconductor material such as Silicon (Si) or Germanium (Ge), or a compound semiconductor material like Gallium-Arsenide (GaAs) or an Indium compound, e.g., Indium-Antimonide (InSb), or InGaA.

As is known, some of the above-described magnetic field sensing elements tend to have an axis of maximum sensitivity substantially parallel to a substrate that supports the magnetic field sensing element, and others of the above-described magnetic field sensing elements tend to have an axis of maximum sensitivity substantially perpendicular to a substrate that supports the magnetic field sensing element. In particular, planar Hall elements tend to have axes of sensitivity substantially perpendicular to a substrate, while metal based or metallic magnetoresistance elements (e.g., GMR, TMR, AMR) and vertical Hall elements tend to have axes of sensitivity parallel to a substrate.

As used herein, the term “magnetic field sensor” is used to describe a circuit that uses a magnetic field sensing element, generally in combination with other circuits. Magnetic field sensors are used in a variety of applications, including, but not limited to, an angle sensor that senses an angle of a direction of a magnetic field, a current sensor that senses a magnetic field generated by a current carried by a current-carrying conductor, a magnetic switch that senses the proximity of a ferromagnetic object, a rotation detector that senses passing ferromagnetic articles, for example, magnetic domains of a ring magnet, and a magnetic field sensor that senses a magnetic field density of a magnetic field.

The terms “parallel” and “perpendicular” are used in various contexts herein. It should be understood that the terms parallel and perpendicular do not require exact perpendicularity or exact parallelism, but instead it is intended that normal manufacturing tolerances apply, which tolerances depend upon the context in which the terms are used. In some instances, the term “substantially” is used to modify the terms “parallel” or “perpendicular.” In general, use of the term “substantially” reflects angles that are beyond manufacturing tolerances, for example, within +/−ten degrees.

Examples below describe a particular gear as may be used upon an engine camshaft target object. However, similar circuits and techniques can be used with other cams or gears disposed upon the engine camshaft, or upon other rotating parts of an engine (e.g., crank shaft, transmission gear, anti-lock braking system (ABS)), or upon rotating parts of a device that is not an engine. Other applications may include linear translation sensors or other sensors where the target is not a rotating gear. The gear (or target) is not a part of the magnetic field sensors described below. The gear can have ferromagnetic gear teeth, which can be soft ferromagnetic objects, but which can also be hard ferromagnetic objects, patterns, or domains which may or may not have actual physical changes in their shape.

Also, while examples are shown below of magnetic field sensors that can sense ferromagnetic gear teeth or gear teeth edges upon a gear configured to rotate, the magnetic field sensors can be used in other applications. The other applications include, but are not limited to, sensing ferromagnetic objects upon a structure configured to move linearly.

As used herein, the term “baseline” and the phrase “baseline level” are used to describe a lowest magnitude (which may be near zero or may be some other magnetic field) of a magnetic field experienced by a magnetic field sensing element within a magnetic field sensor when the magnetic field sensor is operating in a system. In some systems, this lowest magnetic field occurs when a magnetic field sensor is proximate to a gear valley as opposed to a gear tooth.

It will be understood that, in general, a difference between the baseline level and a higher level achieved, for example, when a gear tooth is proximate to a magnetic field sensor, is related to an ability of the magnetic field sensor to differentiate between a gear tooth and a valley, and thus, related to accuracy of the magnetic field sensor.

While it is described above that a baseline level is generated when a magnetic field sensor is proximate to a gear valley and a higher level is achieved when the magnetic field sensor is proximate to a gear tooth, other physical arrangements are also possible, for example, a reverse arrangement for which a baseline level is generated when a magnetic field sensor is proximate to a gear tooth and a higher level is achieved when the magnetic field sensor is proximate to a gear valley.

As used herein, the term “processor” is used to describe an electronic circuit that performs a function, an operation, or a sequence of operations. The function, operation, or sequence of operations can be hard coded into the electronic circuit or soft coded by way of instructions held in a memory device. A “processor” can perform the function, operation, or sequence of operations using digital values or using analog signals.

In some embodiments, the “processor” can be embodied in an application specific integrated circuit (ASIC), which can be an analog ASIC or a digital ASIC. In some embodiments, the “processor” can be embodied in a microprocessor with associated program memory. In some embodiments, the “processor” can be embodied in a discrete electronic circuit, which can be an analog or digital.

As used herein, the term “module” is used to describe a “processor.”

A processor can contain internal processors or internal modules that perform portions of the function, operation, or sequence of operations of the processor. Similarly, a module can contain internal processors or internal modules that perform portions of the function, operation, or sequence of operations of the module.

While electronic circuits shown in figures herein may be shown in the form of analog blocks or digital blocks, it will be understood that the analog blocks can be replaced by digital blocks that perform the same or similar functions and the digital blocks can be replaced by analog blocks that perform the same or similar functions. Analog-to-digital or digital-to-analog conversions may not be explicitly shown in the figures, but should be understood.

As used herein, the term “predetermined,” when referring to a value or signal, is used to refer to a value or signal that is set, or fixed, in the factory at the time of manufacture, or by external means, e.g., programming, thereafter. As used herein, the term “determined,” when referring to a value or signal, is used to refer to a value or signal that is identified by a circuit during operation, after manufacture.

As used herein, the term “active electronic component” is used to describe an electronic component that has at least one p-n junction. A transistor, a diode, and a logic gate are examples of active electronic components. In contrast, as used herein, the term “passive electronic component” as used to describe an electronic component that does not have at least one p-n junction. A capacitor and a resistor are examples of passive electronic components.

Referring now to FIG. 1, an example conventional magnetic field sensor 100 is responsive to a gear 114 having gear teeth, e.g., gear teeth 114 a, 114 b, 114 c. The magnetic field sensor 100 includes three magnetic field sensing elements 102, 104, 106 coupled to an electronic circuit 110 upon a substrate 108. In some embodiments, the magnetic field sensing elements 102, 104 are separated in a direction substantially perpendicular to an axis 116 by a distance between about 1.5 millimeters and about 3.0 millimeters, and the magnetic field sensing element 106 is located midway between the magnetic field sensing elements 102, 104.

The three magnetic field sensing elements 102, 104, 106 and an electronic circuit 110 can be disposed upon (i.e., integrated within or upon) a substrate 108. Here, the magnetic field sensing elements 102, 104, 106 are shown to be planar Hall effect elements. The magnetic field sensor 100 can also include a magnet 112, resulting in a back-biased arrangement. The magnet 112 is configured to generate a magnetic field, which is generally directed along the axis 116 at the position of the magnetic field sensing elements 102, 104, 106.

The electronic circuit 110 is configured to generate an output signal (not shown). An exemplary electronic circuit 110 is described below in conjunction with FIG. 2. Let it suffice here to say that the electronic circuit 110 generates a difference of signals. Thus, the magnetic field sensor 100 is an edge detector and not a tooth detector.

An “edge detector” is not able to identify whether the magnetic field sensor 100 is proximate to a gear tooth or a gear valley. However, the edge detector is able to sense edges of gear teeth as they move past the magnetic field sensor 350. In contrast, a “tooth detector” is able to identify whether a magnetic field sensor is proximate to a gear tooth or valley.

The output signal, when the gear 114 is rotating, is indicative speed of rotation of the gear 114 and can also be indicative of a direction of rotation of the gear 114 by circuits and techniques described more fully below.

In some embodiments, the magnet 112 can have a central core (not shown). The central core (not shown) can be comprised of a soft ferromagnetic material disposed within the magnet 112. An example of a magnet with a core is described in U.S. Pat. No. 6,278,269, entitled “Magnet Structure,” issued Aug. 21, 2001, which patent is assigned to the assignee of the present invention and incorporated herein by reference in its entirety. As described in U.S. Pat. No. 6,278,269, the pole configuration provided by the magnet with the core lowers the base field (or baseline) of a flux density of the magnetic field at some points above the surface of the core (e.g., to the left of the magnet 112 as shown) when a valley of the gear 114 is proximate to the magnetic field sensor 100. A predetermined baseline (e.g., within a range of about +/six hundred Gauss) at the magnetic field sensing elements 102, 104, 106, can be achieved with proper design.

The above-described low baseline, which occurs when the magnetic field sensor is proximate to a gear valley, results in the electronic circuit 110 being able to identify gear teeth as they pass by the magnetic field sensor 100.

As described above, the central core can result in a low baseline when the magnetic field sensing element 102, 104, 106 are proximate to a valley in the gear 114. However, the magnetic field sensor 100 uses three magnetic field sensing elements, generating a respective three differential output signals 102 a, 102 b, and 104 a, 104 b, and 106 a, 106 b. As will be described in conjunction with FIG. 2, pairs of signals representative of the three differential output signals 102 a, 102 b, and 104 a, 104 b, and 106 a, 106 b are subtracted in the electronic circuit 110. Thus, when the three magnetic field sensing elements 102, 104, 106 are proximate to a valley in the gear 114, the differential nature of the combined signal can result in an even lower combined signal than can achieved by the low baseline alone. Also, when the three magnetic field sensing elements 102, 104, 106 are proximate to a gear tooth, the low combined signal is also achieved. Only when some of the magnetic field sensing elements 102, 104, 106 are proximate to a gear tooth and others are proximate to a gear valley, i.e., proximate to a gear edge, is the combined signal increased. Thus, the magnetic field sensor 100 is an edge detector, and not a tooth detector.

The differencing of pairs of the three differential signals 102 a, 102 b, and 104 a, 104 b, and 106 a, 106 b results in an improved accuracy of the magnetic field sensor 100. For example, the magnetic field sensor 100 is less influenced by external magnetic fields, i.e., noise magnetic fields and/or by nose electromagnetic field, i.e., by noise electrical signals, that the three magnetic field sensing elements 102, 104, 106 may experience in the same way.

Referring now to FIG. 2, a conventional electronic circuit 140 can include amplifiers 148, 150, 152 coupled to receive differential signals 142 a, 142 b, and 144 a, 144 b, and 146 a, 146 b, respectively. The differential signal 142 a, 142 b can be the same as or similar to the differential signal 102 a, 102 b, the differential signal 144 a, 144 b can be the same as or similar to the differential signals 104 a, 104 b, and the differential signal 146 a, 146 b can be the same as or similar to the differential signal 106 a, 106 b generated, respectively, by the magnetic field sensing elements 102, 104, 106 of FIG. 1. The amplifiers 148, 150, 152 are configured to generate amplified signals 148 a, 150 a, 152 a, respectively.

The amplified signals 148 a, 152 a are received by a first differencing module 154, which is configured to generate a first difference signal 154 a. The amplified signals 150 a, 152 a are received by a second differencing module 156, which is configured to generate a second difference signal 156 a.

The electronic circuit 140 can include a first automatic gain control/automatic offset control (AGC/AOA) module 160 coupled to receive the first difference signal 154 a. The electronic circuit 140 can include a second automatic gain control/automatic offset control (AGC/AOA) module 166 coupled to receive the second difference signal 156 a.

The first AGC/AOA module 160 is operable to generate a first calibrated signal 160 a and the second AGC/AOA module 166 is operable to generate a second calibrated signal 166 a. The calibrated signals 160 a 166 a can have signal values adjusted in gain so that AC signal components thereof can match in amplitude, and signal values for which DC offset signal components thereof are substantially removed.

A first rotation detector module 162 a is coupled to receive the first calibrated signal 160 a and a second rotation detector 168 is coupled to receive the second calibrated signal 166 a.

Generally speaking, the rotation detector modules 162, 166 are operable to convert the calibrated signals 160 a, 166 a from multi-state signals, e.g., analog sinusoid signals, to two-state signals 162 a, 168 a, respectively. This conversion can be accomplished, for example, by comparing the first calibrated signal 160 a with one or more threshold values to generate the first two-state signal 162 a and comparing the second calibrated signal 166 a with another one or more threshold values to generate the second two-state signal 168 a.

A variety of ways have been used to generate the above-described threshold values. For example, in one type of magnetic field sensor described in U.S. Pat. No. 6,525,531, issued Feb. 25, 2003, a positive digital-to-analog converter (PDAC) and a negative digital-to-analog converter (NDAC) track positive and negative peaks of magnetic field signal, respectively, for use in generating a threshold signal. A varying magnetic field signal is compared to the threshold signal to generate a two-state signal. Other ways to generate the above-described threshold values are described, for example, in U.S. Pat. No. 7,368,904, issued May 6, 2008, and U.S. Pat. No. 7,253,614, issued Aug. 7, 2007, and U.S. Pat. No. 7,772,838, issued Aug. 10, 2010, all of which are assigned to the assignee of the present invention and both of which are incorporated by reference herein in their entirety.

The two-state signals 162 a, 168 a each have state transitions, rates of which are indicative of a speed of rotation of the gear 114. The two-state signals 162 a, 168 a also have a relative phase, one having state transitions that occur before the other or vice versa. A sign (plus or minus) of a relative phase of the two-state signals 162 a, 168 a is indicative of a direction of rotation of the gear 114.

The sign of the relative phase is most easily determined and least subject to errors caused for example, by magnetic and electrical noise, if the relative phase between the two-state signals 162 a, 168 a is large. Phase separation between the two state signals 162 a, 168 a is ultimately determined according to a separation between the magnetic field sensing elements 102, 104 and a speed of rotation of the gear 114. In order to keep the substrate 108 small, it is desirable that the separation between the magnetic field sensing elements 102, 104 is small.

As described above, in some embodiments, the magnetic field sensing elements 102, 104 are separated in a direction substantially perpendicular to the axis 116 by a distance between about 1.5 millimeters and about 3.0 millimeters, and the magnetic field sensing element 106 is located midway between the magnetic field sensing elements 102, 104.

For typical gears, e.g., the gear 104, it can be determined that the relative phase between the two-state signals 162 a, 168 a tends to be small, for example, in the range of +/−ten to fifteen degrees.

A speed/direction module 164 is coupled to receive the two-state signals 162 a, 168 a and configured to generate a speed/direction signal 164 a representative of at least one of the speed of rotation or the direction of rotation of the gear.

Referring now to FIG. 3, first and second graphs 300, 320 have horizontal axes with scales in units of time in arbitrary units and vertical axes with scales in units of amplitude in arbitrary units.

In the first graph 300, a first signal 302 is indicative of the first two-state signal 162 a of FIG. 2 when the gear 114 is rotating in a first direction, and a second signal 304 is indicative of the second two-state signal 168 a of FIG. 2 when the gear 114 is rotating in the first direction. Each edge (state transition) of the signals 302, 304 can be indicative of a gear tooth edge passing by the magnetic field sensor 100.

A phase difference 306 indicates a phase difference when the first and second two-state signals are operating in response to the gear 114 rotating in the first direction.

In the second graph 320, the same first signal 302 is indicative of the first two-state signal 162 a of FIG. 2 when the gear 114 is rotating in a second different direction, and the same second signal 304 is indicative of the second two-state signal 168 a of FIG. 2 when the gear 114 is rotating in the second direction. Again, each edge (state transition) of the signals 302, 304 can be indicative of a gear tooth edge passing by the magnetic field sensor 100.

A phase difference 308 indicates a phase difference when the first and second two-state signals are operating in response to the gear 114 rotating in the second direction.

It should be apparent that the phase differences 306, 308 have opposite signs. The signs are indicative of the direction of rotation of the gear 114.

In addition, from discussion above in conjunction with FIG. 2, it should be apparent that the phase differences 306, 308 are fairly small and subject to various noises that can result in a detection of the wrong sign of the phase and a corresponding indication of the wrong direction of rotation of the gear 114, either intermittently or statically.

Referring now to FIG. 4, an illustrative magnetic field sensor 400 includes a substrate 402 having a first surface 402 a, a magnetic field sensing element region 404 having magnetic field sensing elements therein and disposed in or upon the first surface 402 a, and an electronic circuit 406 coupled to the magnetic field sensing element region 404 and disposed in or upon the first surface 402 a. In some embodiments, the substrate 402 is a semiconductor substrate 402.

Here it is shown that the first surface 402 a can be positioned proximate to a ferromagnetic gear 422 having gear teeth 422 a, 422 b, 422 c, and others. However, in other embodiments, the first surface 402 a upon which magnetic field sensing elements are disposed in or upon can be positioned in the other direction, distal from the gear 422.

While a rotating gear 422 having ferromagnetic gear teeth, e.g., 422 a, is described in examples herein, in other embodiments, an object having ferromagnetic features that move linearly or in some other motion can be used and speed of movement and direction of the movement can be detected with circuits and techniques herein.

The substrate 402 can be disposed substantially parallel to an x-y plane of axes 420.

A magnet 408 can be disposed proximate to the substrate 402 such that a so-called “magnet axis” 424 passes through a north pole 408 a, N, and a south pole 408 b, S in a direction substantially perpendicular to the surface 402 a of the substrate 402. In some embodiments, the axis 424 can also pass though an axis of rotation 428 of the gear. The magnet axis 424 can insect the surfaces 408 a, 408 b central to the surfaces 408 a, 408 b.

The magnetic field sensor 400 can rotate in a direction 416 through about +/−thirty degrees while maintaining some accuracy. The magnetic field sensor 400 can also rotate in a direction 416 though about +/−thirty degrees while maintaining some accuracy.

The gear 422 can rotate in a direction 426. A tangent line 440 can be tangent to the rotation direction 426.

Now referring to FIG. 5, a substrate portion of a magnetic field sensor 500 can include a substrate 502 the same as or similar to the substrate 402 of FIG. 4. The substrate 502 can be disposed parallel to the same x-y plane of coordinate axes 540 as indicated by the coordinate axes 420 of FIG. 4

A surface 502 a of the substrate 502 can be the same as or similar to the surface 402 a of the substrate 402 of FIG. 4.

An electronic circuit 516 can be disposed in or upon the surface 502 a of the substrate 502. The electronic circuit 516 can be the same as or similar to the electronic circuit 406 of FIG. 4.

A first magnetic field sensing element 504 and a second magnetic field sensing element 508 can be the same as or similar to magnetic field sensing elements in the magnetic field sensing element region 404 of FIG. 4

A ferromagnetic object can move with a direction substantially parallel to a line 514, which can be, for example, representative of a line substantially parallel to the tangent line 440 of FIG. 4. The ferromagnetic object can move directly over the substrate point at which the orthogonal axes 530, 532 intersect.

The first magnetic field sensing element 504 can be a planar Hall effect element 504 (also sometimes referred to as a horizontal Hall effect element). As described above, the planar Hall effect element 504 has an axis of maximum sensitivity 506 substantially parallel to a z-axis of coordinate axes 540. The axis of maximum sensitivity 506 is substantially perpendicular to the surface 502 a of the substrate.

In contrast, the second magnetic field sensing element 508 can be a vertical Hall effect element 508. As described above, the vertical Hall effect element 508 has an axis of maximum sensitivity 510 substantially parallel to the x-axis of the coordinate axes 540, i.e., substantially parallel to the surface 502 a of the substrate. The maximum response axis 506 can be substantially perpendicular to the maximum response axis 510.

Electronic signals 512, described more fully below, couple the first and second magnetic field sensing elements 504, 508 to the electronic circuit 516.

A magnet (not shown) can be disposed under the substrate 502 and can have the same orientation and characteristics described below in conjunction with the magnet 408 of FIG. 4.

First and second orthogonal axes 530, 532, respectively, substantially parallel to the first surface 502 a of the substrate 502, are indicative of examples of relative placements of the first and second magnetic field sensing elements 504, 508, and also indicative of an example of a relative position of the magnet 408 of FIG. 4. The axis 424 of the magnet can intersect in a z direction (see coordinate axes 540) at an intersection of the first and second orthogonal axes 530, 532, the intersection also referred to herein as a “substrate point.” The first and second magnetic field sensing elements 504, 508 can be disposed along the first or second orthogonal axes 530, 532.

A center of the first magnetic field sensing element 504 can be disposed along the first orthogonal axis 530. In some embodiments, the center of the first magnetic field sensing element 504 can be disposed at the intersection of the first and second coordinate axes 530, 532.

A center of second magnetic field sensing element 508 b can be disposed along the first or second orthogonal axis 530, 540, here shown to be along the second orthogonal axis 532. However, other placements of the second magnetic field sensing element 508 are also possible.

Referring now to FIG. 6, a substrate portion of a magnetic field sensor 600 can include a substrate 602 the same as or similar to the substrate 402 of FIG. 4. The substrate 602 can be disposed parallel to the same x-y plane of coordinate axes 640 as indicated by the coordinate axes 420 of FIG. 4

A surface 602 a of the substrate 602 can be the same as or similar to the surface 402 a of the substrate 402 of FIG. 4.

An electronic circuit 604 can be disposed in or upon the surface 602 a of the substrate 602. The electronic circuit 604 can be the same as or similar to the electronic circuit 406 of FIG. 4.

A first magnetic field sensing element 606, a second magnetic field sensing element 610, a third magnetic field sensing element 614, and a fourth magnetic field sensing element 618 can be the same as or similar to magnetic field sensing elements in the magnetic field sensing element region 404 of FIG. 4

A ferromagnetic object (not shown) can move with a direction substantially parallel to a line 624, which can be, for example, representative of a line substantially parallel to the tangent line 440 of FIG. 4. The ferromagnetic object can move directly over the substrate point at which the orthogonal axes 630, 632 intersect.

The first magnetic field sensing element 606 and the third magnetic field sensing element 614 can be planar Hall effect elements 606, 614 (also sometimes referred to as horizontal Hall effect elements). As described above, the planar Hall effect element 606 and has an axis of maximum sensitivity 608 and the planar Hall effect element 614 has an axis of maximum sensitivity 616, both substantially parallel to a z-axis of coordinate axes 540. The axes of maximum sensitivity 608, 616 are substantially perpendicular to the surface 602 a of the substrate 602.

In contrast, the second magnetic field sensing element 610 and the fourth magnetic field sensing element 618 can be vertical Hall effect elements 610, 618. As described above, the vertical Hall effect elements 610, 618 have respective axes of maximum sensitivity 612, 620 substantially parallel to the x-axis of the coordinate axes 640, i.e., substantially parallel to the surface 602 a of the substrate. The maximum response axes 608, 616 can be substantially perpendicular to the response axes 612, 620.

Electronic signals 622 a, 622 b, described more fully below, couple the first, second, third and fourth magnetic field sensing elements 606, 610, 614, 618, respectively, to the electronic circuit 604

A magnet (not shown) can be disposed under the substrate 602 and can have the same orientation and characteristics described below in conjunction with the magnet 408 of FIG. 4.

First and second orthogonal axes 630, 632, respectively, substantially parallel to the first surface 602 a of the substrate 602, are indicative of examples of relative placements of the first, second, third and fourth magnetic field sensing elements 606, 610, 614, 618, respectively, and also indicative of an example of a relative position of the magnet 408 of FIG. 4. The axis 424 of the magnet can intersect in a z direction (see coordinate axes 640) at an intersection of the first and second orthogonal axes 630, 632, the intersection also referred to herein as a “substrate point.” The first, second, third, and fourth magnetic field sensing elements 608, 610, 614, 618, respectively, can be disposed along the first or second orthogonal axes 630, 632 and can also be disposed apart from the substrate point.

Centers of the first and third magnetic field sensing elements 606, 614, respectively, can be disposed along the first orthogonal axis 630. In some embodiments, a midpoint between centers of the first and third magnetic field sensing elements 606, 614, respectively, can be disposed at the intersection of the first and second coordinate axes 630, 632.

Centers of second and fourth magnetic field sensing elements 610, 618, respectively, can be disposed along the first or second orthogonal axis 630, 632, here shown to be along the first orthogonal axis 630. In some embodiments, a midpoint between centers of the second and fourth magnetic field sensing elements 610, 618, respectively, can be disposed at the intersection of the first and second coordinate axes 630, 632. However, other placements of the second and fourth magnetic field sensing elements 610, 618 are also possible.

Referring now to FIG. 7, shown in three views 700 a, 700 b, 700 c, a magnetic field sensor 700 has a substrate 702 that is the same as or similar to the substrate 502 of FIG. 5. A planar Hall effect element 704 is the same as or similar to the planar Hall effect element 506 of FIG. 5. A vertical Hall effect element 706 is the same as or similar to the vertical Hall effect element 508 of FIG. 5. A magnet 708 is the same as or similar to the magnet 408 of FIG. 4. An axis 708 a is the same as or similar to the magnet axis 424 of FIG. 4, passing between north and south poles of the magnet 708.

A ferromagnetic target 710 (here shown at two positions 710 a, 710 b) is shown at two positions relative to the views 700 b, 700 c of the magnetic field sensor 700. In the left view 700 a, a ferromagnetic target is far away and not shown. In the center view 700 b, a ferromagnetic target 710 a is to the left of the view 700 b of the magnetic field sensor 700. In the right view 700 c, the ferromagnetic target 710 b is to the right of the view 700 c of the magnetic field sensor 700.

A line of magnetic flux 712 (among many such lines) is substantially parallel to the axis 708 a of the magnet 708 in the view 700 a when no ferromagnetic object is nearby.

A line of magnetic flux 714 has a head angled to the left as shown in the view 700 b when the ferromagnetic target 710 a is to the left in the view 700 b of the magnetic field sensor 700.

A line of magnetic flux 716 has a head angled to the right as shown in the view 700 c when the ferromagnetic target 710 b is to the right in the view 700 c of the magnetic field sensor 700.

Thus, it can be seen that the magnetic flux changes angle when the ferromagnetic target 710 a, 710 b passes by the magnetic field sensor 700 a, 700 b, 700 c in a direction substantially parallel to an x-axis of the coordinate axes 740.

It should be apparent that an output signal from the planar Hall effect element 704 has an amplitude responsive to a projection of a sensed magnetic field upon its maximum response axis, i.e., to a projection upon an axis centered with the planar Hall effect element 704 and substantially parallel to the z-axis (i.e., substantially perpendicular to the surface 702 a of the substrate 702). It should also be apparent that an output signal from the vertical Hall effect element 704 has an amplitude responsive to a projection of a sensed magnetic field upon its maximum response axis, i.e., to a projection upon an axis centered with the vertical hall effect element 706 and substantially parallel to the x-axis (i.e., substantially parallel to the surface 702 a of the substrate 702). Thus, both the planar Hall effect element 704 and the vertical Hall effect element 706 have respective varying output signals as the ferromagnetic target object 710 a, 710 b passes by in a direction of the x-axis of the coordinate axes 740. Further explanation of operation of the magnetic field sensor 700 a, 700 b, 700 c is given below.

The ferromagnetic target object 710 a, 710 b can be representative of a gear tooth on a gear, for example, one of the gear teeth, e.g., 422 b, on the gear 422 of FIG. 4. However, the ferromagnetic target object 710 a, 710 b can be representative of any other ferromagnetic target object.

Referring now to FIG. 8, shown in three views 800 a, 800 b, 800 c, a magnetic field sensor 800 has a substrate 802 that is the same as or similar to the substrate 502 of FIG. 5. A first magnetic field sensing element 804 comprising a planar Hall effect element 804 is the same as or similar to the first magnetic field sensing element 606 of FIG. 6, i.e., the planar Hall effect element 606 of FIG. 6.

A second magnetic field sensing element 806 comprising a vertical Hall effect element 806 is the same as or similar to the second magnetic field sensing element 610 of FIG. 6, i.e., the vertical Hall effect element 610 of FIG. 6.

A third magnetic field sensing element 808 comprising a planar Hall effect element 808 is the same as or similar to the third magnetic field sensing element 614 of FIG. 6, i.e., the planar Hall effect element 614 of FIG. 6.

A fourth magnetic field sensing element 810 comprising a vertical Hall effect element 810 is the same as or similar to the fourth magnetic field sensing element 618 of FIG. 6, i.e., the vertical Hall effect element 618 of FIG. 6.

A magnet 808 is the same as or similar to the magnet 408 of FIG. 4. An axis 812 a is the same as or similar to the magnet axis 424 of FIG. 4, passing between north and south poles of the magnet 808.

A ferromagnetic target 826 (here shown at two positions 826 a, 826 b) is shown at two positions relative to the views 800 b, 800 c of the magnetic field sensor 800. In the left view 800 a, a ferromagnetic target is far away and not shown. In the center view 800 b, a ferromagnetic target 826 a is to the left of the view 800 b of the magnetic field sensor 800. In the right view 800 c, the ferromagnetic target 826 b is to the right of the view 800 c of the magnetic field sensor 800.

Lines of magnetic flux 814, 816 (among many such lines) have heads symmetrically to the left and to the right, respectively, relative to the axis 812 a of the magnet 812 in the view 800 a when no ferromagnetic object is nearby.

Lines of magnetic flux 818, 820 have heads in the view 800 b such that the line of flux 818 is less angled to the left than the line of magnetic flux 814, when the ferromagnetic target 826 a is to the left in the view 800 b of the magnetic field sensor 800.

Lines of magnetic flux 822, 824 have heads in the view 800 c such that the line of flux 824 is less angled to the right than the line of magnetic flux 816, when the ferromagnetic target 826 b is to the right in the view 800 c of the magnetic field sensor 800.

Thus, it can be seen that the magnetic flux changes angles when the ferromagnetic target 810 a, 810 b passes by the magnetic field sensor 800 a, 800 b, 800 c in a direction substantially parallel to an x-axis of the coordinate axes 840.

It should be apparent that respective output signals from the planar Hall effect elements 804, 808 have respective amplitudes responsive to projections of respective sensed magnetic fields upon their respective maximum response axes, i.e., to projections upon axes centered with the planar Hall effect elements 804, 808 and substantially parallel to the z-axis (i.e., substantially perpendicular to the surface 802 a of the substrate 802). It should also be apparent that respective output signals from the vertical Hall effect elements 806, 810 have respective amplitudes responsive to projections of respective sensed magnetic fields upon their respective maximum response axes, i.e., to projections upon axes centered with the vertical Hall effect elements 806, 810 and substantially parallel to the x-axis (i.e., substantially parallel to the surface 802 a of the substrate 802). Thus, both the planar Hall effect elements 804, 808 and the vertical Hall effect elements 806, 810 have varying output signals as the ferromagnetic target object 826 a, 826 b passes by in a direction of the x-axis of the coordinate axes 840. Further explanation of operation of the magnetic field sensor 800 a, 800 b, 800 c is given below.

The ferromagnetic target object 826 a, 826 b can be representative of a gear tooth on a gear, for example, one of the gear teeth, e.g., 422 b, on the gear 422 of FIG. 4. However, the ferromagnetic target object 826 a, 826 b can be representative of any other ferromagnetic target object.

Referring now to FIG. 9, three views 900 as, 900 b, 900 c show a representation of a vertical Hall effect element 902 with a maximum response axis 902 a and a planar Hall effect element 904 with a maximum response axis 904 a.

A line of magnetic flux 906 is at a first angle, a line of magnetic flux 908 is at a second angle, and a line of magnetic flux 910 is at a third angle. It should be apparent that the three lines of magnetic flux 906, 908, 910 are representative of lines of magnetic flux that pass through the vertical Hall effect element 902 (e.g., 706, 806, 810) and through the planar Hall effect element 904 (e.g., 704, 804, 808) as the ferromagnetic target objects of FIGS. 7 and 8 pass by respective magnetic field sensor.

The vertical Hall effect element 902 has an axis of maximum sensitivity 902 a. The planar Hall effect element 904 has an axis of maximum sensitivity 904 a.

The vertical Hall effect element 902 has an output signal proportional to a projection of the magnetic field (906, 908, 910) on the axis of maximum sensitivity 902 a. The planar Hall effect element 904 has an output signal proportional to a projection of the magnetic field (906, 908, 910) on the axis of maximum sensitivity 904 a. The projections are related to the angles X and Z, respectively, as shown.

It will be apparent that the output signal from the vertical Hall effect element 902 becomes greater in amplitude as the magnetic flux changes from magnetic flux 906 to 908 to 910. Conversely, it will be apparent that the output signal from the planar Hall effect element 904 becomes lesser as the magnetic flux changes from magnetic flux 906 to 908 to 910.

If the magnetic flux were to move back and forth in alternating directions as represented by the views 700 a, 700 b, 700 c and 800 a, 800 b, 800 c as a ferromagnetic object passes by, the output signals from the vertical Hall effect element and the planar Hall effect element would be sinusoids that, within extreme limits, are always ninety degrees apart, regardless of the frequency of the sinusoid, i.e., regardless of the speed of motion of the ferromagnetic object, e.g., regardless of the speed of rotation of the gear 422 of FIG. 4 with ferromagnetic teeth.

Referring now to FIG. 10, first and second graphs 1000, 1020 have horizontal axes with scales in units of time in arbitrary units and vertical axes with scales in units of amplitude in arbitrary units.

In the first graph 1000, a first signal 1002 is indicative of a first two-state signal described in conjunction with figures below when the gear 422 of FIG. 4 is rotating in a first direction, and a second signal 1004 is indicative of a second two-state signal described in conjunction with figures below when the gear 422 is rotating in the first direction. Each edge (state transition) of the signals 1002, 1004 can be indicative of a gear tooth edge passing by the magnetic field sensor 400 of FIG. 4

A phase difference 1006 indicates a phase difference when the first and second two-state signals are operating in response to the gear 422 rotating in the first direction.

In the second graph 1020, the same first signal 1002 is indicative of the first two-state signal described in conjunction with figures below when the gear 422 is rotating in a second different direction, and the same second signal 1004 is indicative of the second two-state signal described in conjunction with figures below when the gear 422 is rotating in the second direction. Again, each edge (state transition) of the signals 1002, 1004 can be indicative of a gear tooth edge passing by the magnetic field sensor 100.

A phase difference 1008 indicates a phase difference when the first and second two-state signals 1002, 1004 are operating in response to the gear 422 rotating in the second direction.

It should be apparent that the phase differences 1006, 1008 have opposite signs. The signs are is indicative of the direction of rotation of the gear 422.

The phase differences are the result of magnetic field sensor signals described above in FIG. 10 to be ninety degrees apart. Comparing the ninety degree phase differences to the smaller phase difference of FIG. 3, direction detection is much less subject to various noises that can otherwise result in a detection of the wrong sign of the phase and a corresponding indication of the wrong direction of rotation of the gear 422.

The phase separations 1006, 1008 can remain the same for all rotation speed of the gear 422 of FIG. 4

Referring now to FIG. 11, an electronic circuit 1100 can be the same as the electronic circuit 406 of FIG. 4 when the magnetic field sensor 400 of FIG. 4 includes the substrate portion 500 of FIG. 5, having two magnetic field sensing element 504, 508. The first magnetic field sensing element 504 of FIG. 5 provides a differential signal 1102 and the second magnetic field sensing element 508 provides a differential signal 1112 to amplifiers 1104, 1114, respectively.

In accordance with the discussion above in conjunction with FIGS. 9 and 10, the differential signals 1102, 1112 have a ninety degree phase relationship when the gear 422 of FIG. 4 rotates, for all rotational speeds of the gear 422.

Amplifiers 1104, 1114, are coupled to receive the differential signals 1102, 1112, respectively, and operable to generate amplified signals 1104 a, 1114 a, which are received by AGC/AOA modules 1106, 1116, respectively.

The AGC/AOA modules 1106 1116, rotation detector modules 1108, 1118, and a speed/direction module 1110 can be the same as and coupled the same way as AGC/AOA modules 160, 166, the rotation detector modules 162, 168, and the speed/direction module 164 of FIG. 2.

Two-state signals 1108 a, 1118 a have +/−ninety degree phase relationships described above in conjunction with FIG. 10.

The electronic circuit 1100 can provide a so-called “tooth detector” that can sense a presence or absence of proximity of a gear tooth (also valley), even when the gear 422 of FIG. 4 is not rotating.

Referring now to FIG. 12, an electronic circuit 1200 can be the same as the electronic circuit 406 of FIG. 4 when the magnetic field sensor 400 of FIG. 4 includes the substrate portion 600 of FIG. 6, having four magnetic field sensing element 606, 610, 614, 618. The first magnetic field sensing element 606 of FIG. 6 provides a differential signal 1202. The third magnetic field sensing element 614 of FIG. 6 provides a differential signal 1214. The second magnetic field sensing element 610 of FIG. 6 provides a differential signal 1218. The fourth magnetic field sensing element 618 of FIG. 6 provides a differential signal 1228.

Amplifiers 1204, 1216, are coupled to receive the differential signals 1202, 1214, respectively, and operable to generate amplified signals 1204 a, 1216 a. A differencing module 1206 can be coupled to receive the amplified signals 1204 a, 1216 a and operable to generate a first difference signal 1206 a.

Amplifiers 1220, 1230, are coupled to receive the differential signals 1218, 1228, respectively, and operable to generate amplified signals 1220 a, 1230 a. A differencing module 1222 can be coupled to receive the amplified signals 1220 a, 1230 a and operable to generate a second difference signal 1222 a.

In accordance with the discussion above in conjunction with FIGS. 9 and 10, the difference signals 1206 a, 1222 a have a ninety degree phase relationship when the gear 422 of FIG. 4 rotates, for all rotational speeds of the gear 422.

AOA/AGC modules 1208, 1224 are coupled to receive the first and second difference signals 1206 a, 1222 a. The AGC/AOA modules 1208, 1224, rotation detector modules 1210, 1226, and a speed/direction module 1212 can be the same as and coupled the same way as AGC/AOA modules 160, 166, the rotation detector modules 162, 168, and the speed/direction module 164 of FIG. 2.

Two-state signals 1210 a 1226 a have +/−ninety degree phase relationships described above in conjunction with FIG. 10.

The electronic circuit 1200, due to the differencing of signals, can provide a so-called “edge detector” that can sense an edge of a gear tooth as it passes by.

Referring now to FIG. 13, a substrate portion of a magnetic field sensor 1300 can include a substrate 1302 the same as or similar to the substrate 402 of FIG. 4. The substrate 1302 can be disposed substantially parallel to the same x-y plane of coordinate axes 1340 as indicated by the coordinate axes 420 of FIG. 4

A surface 1302 a of the substrate 1302 can be the same as or similar to the surface 402 a of the substrate 402 of FIG. 4.

An electronic circuit 1304 can be disposed in or upon the surface 1302 a of the substrate 1302. The electronic circuit 1304 can be the same as or similar to the electronic circuit 406 of FIG. 4.

A first magnetic field sensing element 1306, a second magnetic field sensing element 1310, a third magnetic field sensing element 1314, a fourth magnetic field sensing element 1318, a fifth magnetic field sensing element 1326, and a sixth magnetic field sensing element 1326 can be the same as or similar to magnetic field sensing elements in the magnetic field sensing element region 404 of FIG. 4

A ferromagnetic object (not shown) can move with a direction substantially parallel to a line 1328, which can be, for example, representative of a line substantially parallel to the tangent line 440 of FIG. 4. The ferromagnetic object can move directly over the substrate point at which the orthogonal axes 1330, 1332 intersect.

The first magnetic field sensing element 1306 and the third magnetic field sensing element 1314 can be planar Hall effect elements 1306, 1314 (also sometimes referred to as horizontal Hall effect elements). As described above, the planar Hall effect element 1306 and has an axis of maximum sensitivity 1308 and the planar Hall effect element 1314 has an axis of maximum sensitivity 1316, both substantially parallel to a z-axis of coordinate axes 1340. The axes of maximum sensitivity 1308, 1316 are substantially perpendicular to the surface 1302 a of the substrate 1302.

In contrast, the second magnetic field sensing element 1310 and the fourth magnetic field sensing element 1318 can be a vertical Hall effect elements 1310, 1318. As described above, the vertical Hall effect elements 1310, 1318 have respective axes of maximum sensitivity 1312, 1320 substantially parallel to the x-axis of the coordinate axes 1340, i.e., substantially parallel to the surface 1302 a of the substrate. The maximum response axes 1308, 1316 can be substantially perpendicular to the maximum response axes 1312, 1318.

The fifth magnetic field sensing element 1324 and the sixth magnetic field sensing element 1326 can also be vertical Hall effect elements 1324, 1326. Unlike the vertical Hall effect elements 1310, 1318, the vertical Hall effect elements 1324, 1326 have respective axes of maximum sensitivity 1325, 1327 substantially parallel to the y-axis of the coordinate axes 1340, i.e., substantially parallel to the surface 1302 a of the substrate. The maximum response axes 1325, 1327 can be substantially perpendicular to the maximum response axes 1312, 1320 and substantially perpendicular to the maximum response axes 1308, 1316.

Electronic signals 1322 a, 1322 b, described more fully below, couple the first, second, third, fourth, fifth, and sixth fourth magnetic field sensing elements 1306, 1310, 1314, 1318, 1324, 1326, respectively, to the electronic circuit 1304.

A magnet (not shown) can be disposed under the substrate 1302 and can have the same orientation and characteristics described below in conjunction with the magnet 408 of FIG. 4.

First and second orthogonal axes 1330, 1332, respectively, substantially parallel to the first surface 1302 a of the substrate 1302, are indicative of examples of relative placements of the first, second, third, fourth, fifth, and sixth magnetic field sensing elements 1306, 1310, 1314, 1318, 1324, 1326, respectively, and also indicative of an example of a relative position of the magnet 408 of FIG. 4. The axis 424 of the magnet can intersect in a z direction (see coordinate axes 1340) at an intersection of the first and second orthogonal axes 1330, 1332, the intersection also referred to herein as a “substrate point.” The first, second, third, fourth, fifth and sixth magnetic field sensing elements 1308, 1310, 1314, 1318, 1324, 1326, respectively, can be disposed along the first or second orthogonal axes 1330, 1332 and can also be disposed apart from the substrate point.

Centers of the first and third magnetic field sensing elements 1306, 1314, respectively, can be disposed along the first orthogonal axis 1330. In some embodiments, a midpoint between centers of the first and third magnetic field sensing elements 1306, 1314, respectively, can be disposed at the intersection of the first and second coordinate axes 1330, 1332.

Centers of the second and fourth magnetic field sensing elements 1310, 1318, respectively, can be disposed along the first or second orthogonal axis 1330, 1332, here shown to be along the first orthogonal axis 1330. In some embodiments, a midpoint between centers of the second and fourth magnetic field sensing elements 1310, 1318, respectively, can be disposed at the intersection of the first and second coordinate axes 1330, 1332. However, other placements of the second and fourth magnetic field sensing elements 1310, 1318 are also possible.

Centers of fifth and sixth magnetic field sensing elements 1324, 1326, respectively, can be disposed along the first or second orthogonal axis 1330, 1332, here shown to be along the second orthogonal axis 1332. In some embodiments, a midpoint between centers of the fifth and sixth magnetic field sensing elements 1324, 1326, respectively, can be disposed at the intersection of the first and second coordinate axes 1330, 1332. However, other placements of the fifth and sixth magnetic field sensing elements 1324, 1326 are also possible.

In response to movement of a ferromagnetic object in a direction parallel to an arrow 1328, the fifth and sixth magnetic field sensing elements 1324, 1326 have less response (less change in signal value) than the second and fourth magnetic field sensing elements 1310, 1318. Thus, signals from the fifth and sixth magnetic field sensing elements 1324, 1326, when combined in particular ways with signals from the second and fourth magnetic field sensing elements 1310, 1318, can act as reference signals to reduce various undesirable effects, for example, DC drift with temperature. This arrangement of signal combinations is described below in conjunction with FIG. 14.

Referring now to FIG. 14, an electronic circuit 1400 can be the same as or similar to the electronic circuit 406 of FIG. 4 when the magnetic field sensor 400 of FIG. 4 includes the substrate portion 1300 of FIG. 13, having six magnetic field sensing element 1306, 1310, 1314, 1318, 1324, 1326. The first magnetic field sensing element 1306 of FIG. 13 provides a differential signal 1402. The third magnetic field sensing element 1314 of FIG. 13 provides a differential signal 1414. The second magnetic field sensing element 1310 of FIG. 13 provides a differential signal 1418. The fifth magnetic field sensing element 1324 of FIG. 13 provides a differential signal 1430. The fourth magnetic field sensing element 1318 of FIG. 13 provides a differential signal 1434. The sixth magnetic field sensing element 1326 of FIG. 13 provides a differential signal 1438.

Amplifiers 1404, 1416, are coupled to receive the differential signals 1402, 1414, respectively, and operable to generate amplified signals 1404 a, 1416 a. A differencing module 1406 can be coupled to receive the amplified signals 1404 a, 1416 a and operable to generate a first difference signal 1406 a.

Amplifiers 1420, 1432, are coupled to receive the differential signals 1418, 1430, respectively, and operable to generate amplified signals 1420 a, 1432 a. A differencing module 1422 can be coupled to receive the amplified signals 1420 a, 1432 a and operable to generate a second difference signal 1422 a.

Amplifiers 1434, 1440, are coupled to receive the differential signals 1434, 1438 respectively, and operable to generate amplified signals 1434 a, 1440 a. A differencing module 1436 can be coupled to receive the amplified signals 1434 a, 1440 a and operable to generate a third difference signal 1436 a.

Another differencing module 1424 can be coupled to receive the first and second difference signals 1422 a, 1436 a, respectively and operable to generate a fourth difference signal 1424 a.

In accordance with the discussion above in conjunction with FIGS. 9 and 10, the difference signals 1406 a, 1424 a have a ninety degree phase relationship when the gear 422 of FIG. 4 rotates, for all rotational speeds of the gear 422.

AOA/AGC modules 1408, 1426 are coupled to receive the first and third difference signals 1406 a, 1424 a, respectively. The AGC/AOA modules 1408, 1426, rotation detector modules 1410, 1428, and a speed/direction module 1412 can be the same as and coupled the same way as AGC/AOA modules 160, 166, the rotation detector modules 162, 168, and the speed/direction module 164 of FIG. 2.

Two-state signals 1410 a, 1428 a have +/−ninety degree phase relationships described below in conjunction with FIG. 10.

The difference module 1422 operates to combine the amplified signal 1420 a from the second magnetic field sensing element 1310 with the amplified signal 1432 a from the fifth magnetic field sensing element 1324. As described above in conjunction with FIG. 13, the fifth magnetic field sensing element 1324 is relatively insensitive to a ferromagnetic object that moves in the direction of the line 1328 of FIG. 13. Thus, the differential arrangement provided by the difference module 1422 can result in a stabilization of the resulting difference signal 1422 a against a variety of undesirable effects. For example, upon a temperature change, both the amplified signal 1420 a and the amplified signal 1432 a may experience a similar change of DC offset voltage, which would be reduced in the difference signal 1422 a since the amplified signal 1420 a and the amplified signal 1432 a would tend to move in the same direction and by the same amount.

For substantially the same reason with substantially the same beneficial effects, the difference module 1436 operates to combine the amplified signal 1434 a from the fourth magnetic field sensing element 1318 with the amplified signal 1440 a from the sixth magnetic field sensing element 1326.

The electronic circuit 1400, due to the differencing of signals, can provide a so-called “edge detector” that can sense an edge of a gear tooth as it passes by.

Referring now to FIG. 15, a substrate portion of a magnetic field sensor 1500 can include a substrate 1502 the same as or similar to the substrate 402 of FIG. 4. The substrate 1502 can be disposed substantially parallel to the same x-y plane of coordinate axes 1540 as indicated by the coordinate axes 420 of FIG. 4

A surface 1502 a of the substrate 1502 can be the same as or similar to the surface 402 a of the substrate 402 of FIG. 4.

An electronic circuit 1504 can be disposed in or upon the surface 1502 a of the substrate 1502. The electronic circuit 1504 can be the same as or similar to the electronic circuit 406 of FIG. 4.

A first magnetic field sensing element 1506, a second magnetic field sensing element 1510, a third magnetic field sensing element 1514, and a fourth magnetic field sensing element 1518, can be the same as or similar to magnetic field sensing elements in the magnetic field sensing element region 404 of FIG. 4

A ferromagnetic object (not shown) can move with a direction substantially parallel to a line 1524, which can be, for example, representative of a line substantially parallel to the tangent line 440 of FIG. 4. The ferromagnetic object can move directly over the substrate point at which the orthogonal axes 1530, 1532 intersect.

The first, second, third, and fourth magnetic field sensing elements 1506, 1510, 1514, 1518, respectively, can be vertical Hall effect elements 1506, 1510, 1514, 1518.

The first and third magnetic field sensing elements 1506, 1514 have respective axes of maximum sensitivity 1508, 1520 substantially parallel to the x-axis of coordinate axes 1540 and also substantially parallel to the surface 1502 a of the substrate 1502. The second and fourth magnetic field sensing elements 1510, 1518 have respective axes of maximum sensitivity 1512, 1520 substantially parallel to the y-axis of the coordinate axes 1540, and also substantially parallel to the surface 1502 a of the substrate 1502. The maximum response axes 1508, 1516 can be substantially perpendicular to the maximum response axes 1512, 1518.

Electronic signals 1522 described more fully below, couple the first, second, third, and fourth magnetic field sensing elements 1506, 1510, 1514, 1518, respectively, to the electronic circuit 1504.

A magnet (not shown) can be disposed under the substrate 1502 and can have the same orientation and characteristics described below in conjunction with the magnet 408 of FIG. 4.

First and second orthogonal axes 1530, 1532, respectively, substantially parallel to the first surface 1502 a of the substrate 1502, are indicative of examples of relative placements of the first, second, third, and fourth magnetic field sensing elements 1506, 1510, 1514, 1518, respectively, and also indicative of an example of a relative position of the magnet 408 of FIG. 4. The axis 424 of the magnet can intersect in a z direction (see coordinate axes 1540) at an intersection of the first and second orthogonal axes 1530, 1532, the intersection also referred to herein as a “substrate point.” The first, second, third, and fourth magnetic field sensing elements 1506, 1514, 1510, 1518, respectively, can be disposed along the first or second orthogonal axes 1530, 1532 and can also be disposed apart from the substrate point.

Centers of the first and third magnetic field sensing elements 1506, 1514, respectively, can be disposed along the first orthogonal axis 1530. In some embodiments, a midpoint between centers of the first and third magnetic field sensing elements 1506, 1514, respectively, can be disposed at the intersection of the first and second coordinate axes 1530, 1532.

Centers of the second and fourth magnetic field sensing elements 1510, 1518, respectively, can be disposed along the first or second orthogonal axis 1530, 1532, here shown to be along the second orthogonal axis 1532. In some embodiments, a midpoint between centers of the second and fourth magnetic field sensing elements 1510, 1518, respectively, can be disposed at the intersection of the first and second coordinate axes 1530, 1532. However, other placements of the second and fourth magnetic field sensing elements 1510, 1518 are also possible.

In response to movement of a ferromagnetic object in a direction parallel to an arrow 1524, the second and fourth magnetic field sensing elements 1510, 1518 have less response (less change in signal value) than the first and third magnetic field sensing elements 1506, 1514. Thus, signals from the second and fourth magnetic field sensing elements 1510, 1518, when combined in particular ways with signals from the first and third magnetic field sensing elements 1506, 1514, respectively, can act as reference signals to reduce various undesirable effects, for example, DC drift with temperature. This arrangement of signal combinations is described below in conjunction with FIG. 16.

Referring now to FIG. 16, an electronic circuit 1600 can be the same as the electronic circuit 406 of FIG. 4 when the magnetic field sensor 400 of FIG. 4 includes the magnetic field sensor 1500 of FIG. 15, having the four magnetic field sensing element 1506, 1510, 1514, 1518. The first magnetic field sensing element 1506 of FIG. 15 provides a differential signal 1602. The second magnetic field sensing element 1510 of FIG. 15 provides a differential signal 1614. The third magnetic field sensing element 1514 of FIG. 15 provides a differential signal 1618. The fourth magnetic field sensing element 1518 of FIG. 15 provides a differential signal 1628.

Amplifiers 1604, 1616, are coupled to receive the differential signals 1602, 1614, respectively, and operable to generate amplified signals 1604 a, 1616 a. A differencing module 1606 can be coupled to receive the amplified signals 1604 a, 1616 a and operable to generate a first difference signal 1606 a.

Amplifiers 1620, 1630, are coupled to receive the differential signals 1618, 1628, respectively, and operable to generate amplified signals 1620 a, 1630 a. A differencing module 1622 can be coupled to receive the amplified signals 1620 a, 1630 a and operable to generate a second difference signal 1622 a.

In accordance with the discussion above in conjunction with FIGS. 2 and 3, the difference signals 1606 a, 1622 a have a relatively close (i.e., small) phase relationship when the gear 422 of FIG. 4 rotates, for all rotational speeds of the gear 422. Thus, advantages of the arrangements of FIGS. 4-14 that provide a ninety degree relationship may not be in the arrangements of FIGS. 15 and 16. However, other advantages described above in relation to FIGS. 13 and 14 are retained in the arrangements of FIGS. 15 and 16. Namely, the second and fourth magnetic field sensing elements 1510, 1518 of FIG. 15 provide reference voltages to stabilize for a variety of otherwise undesirable effects, e.g., shifting DC offset voltage with temperature.

AOA/AGC modules 1608, 1624 are coupled to receive the first and third difference signals 1606 a, 1622 a, respectively. The AGC/AOA modules 1608, 1624, rotation detector modules 1610, 1626, and a speed/direction module 1612 can be the same as and coupled the same way as AGC/AOA modules 160, 166, the rotation detector modules 162, 168, and the speed/direction module 164 of FIG. 2.

Two-state signals 1610 a, 1626 a have a phase relationships described below in conjunction with FIG. 3.

The difference module 1606 operates to combine the amplified signal 1604 a from the first magnetic field sensing element 1505 with the amplified signal 1616 a from the second magnetic field sensing element 1510. As described above in conjunction with FIG. 13, the second magnetic field sensing element 1510 is relatively insensitive to a ferromagnetic object that moves in the direction of the line 1524 of FIG. 15. Thus, the differential arrangement provided by the difference module 1606 can result in a stabilization of the resulting difference signal 1606 a against a variety of undesirable effects. For example, upon a temperature change, both the amplified signal 1604 a and the amplified signal 1616 a may experience s similar change of DC offset voltage, which would be reduced in the difference signal 1606 a since the amplified signal 1604 a and the amplified signal 1616 a would tend to move in the same direction and by the same amount.

For substantially the same reason with substantially the same beneficial effects, the difference module 1622 operates to combine the amplified signal 1620 a from the third magnetic field sensing element 1514 with the amplified signal 1630 a from the fourth magnetic field sensing element 1518.

The electronic circuit 1600, can provide a so-called “tooth detector” that can sense a presence or absence of proximity of a gear tooth (also valley), even when the gear 422 of FIG. 4 is not rotating.

While many of the magnetic field sensing elements are described above to be vertical Hall effect elements, in other embodiments, one or more of the vertical Hall effect elements can be magnetoresistance elements. As described above, like vertical Hall effect elements, magnetoresistance elements have a maximum response axis that is substantially parallel to a substrate. Thus, all of the above configurations apply to magnetoresistance elements.

Referring now to FIG. 17, a magnetoresistance element bridge 1700 can be used in place of some of the difference modules described above.

The magnetoresistance element bridge 1700 can include a first magnetoresistance element 1702, a second magnetoresistance element 1704, a first fixed resistor 1706, and a second fixed resistor 1708, all coupled in a bridge arrangement between a voltage source 1710 and a reference voltage, e.g., a ground reference voltage.

A differential signal 1712, 1714 is generated by the magnetoresistance element bridge 1700.

In some embodiments, a buffer amplifier 1716 can be coupled to receive the differential signal 1712, 1714 and operable to generate a buffered signal 1716 a.

It should be apparent that the differential signal 1712, 1714 operate in much the same way as a difference of signals from two magnetoresistance elements. Compare the magnetoresistance element bridge 1700, for example, with the difference module 1606 or the difference module 1622 of FIG. 16. In FIG. 17, if both of the magnetoresistance elements 1702, 1704 move in the same way by the same amount, then the differential voltage 1712, 1714 is unchanged. The buffer 1716 can provide enhanced common mode rejection.

All references cited herein are hereby incorporated herein by reference in their entirety.

Having described preferred embodiments, which serve to illustrate various concepts, structures and techniques, which are the subject of this patent, it will now become apparent that other embodiments incorporating these concepts, structures and techniques may be used.

Accordingly, it is submitted that the scope of the patent should not be limited to the described embodiments but rather should be limited only by the spirit and scope of the following claims.

Elements of embodiments described herein may be combined to form other embodiments not specifically set forth above. Various elements, which are described in the context of a single embodiment, may also be provided separately or in any suitable subcombination. Other embodiments not specifically described herein are also within the scope of the following claims. 

What is claimed is:
 1. A magnetic field sensor for sensing a movement of an object along a path, a movement line tangent to the path, the magnetic field sensor comprising a magnet, the magnet comprising a north pole, a south pole, and a magnet axis passing through the north pole and the south pole; a semiconductor substrate proximate to the magnet in a back biased arrangement and at a position between the object and the magnet, the semiconductor substrate having first and second major opposing surfaces, the magnet axis substantially perpendicular to the first opposing surface of the semiconductor substrate, the semiconductor substrate having first and second orthogonal axes on the first opposing surface of the substrate intersecting at a substrate point on the first surface of the substrate, wherein the magnet axis intersects the substrate point, wherein a projection of the movement line onto the first opposing surface of the semiconductor substrate is substantially parallel to the first orthogonal axis on the first surface of the substrate; a first magnetic field sensing element disposed on or under the first surface of the semiconductor substrate and disposed along the first or second orthogonal axis, wherein the first magnetic field sensing element comprises an axis of maximum sensitivity substantially perpendicular to the first opposing surface of the substrate; a second magnetic field sensing element disposed on or under the first surface of the semiconductor substrate and disposed along the first or second orthogonal axis, wherein the second magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate, wherein the axis of maximum sensitivity of the second magnetic field sensing element is substantially parallel to the first orthogonal axis, wherein the first magnetic field sensing element is not disposed over or under the second magnetic field sensing element relative to the first surface of the semiconductor substrate; a first electronic circuit channel coupled to the first magnetic field sensing element, the first electronic circuit channel operable to generate a first signal having a first phase: and a second electronic circuit channel coupled to the second magnetic field sensing element, the second electronic circuit channel operable to generate a second signal having a second phase approximately +/−ninety degrees apart from the first phase regardless of a speed of the movement of the object, wherein a sign of the ninety degrees is indicative of a direction of the movement of the object.
 2. The magnetic field sensor of claim 1, wherein the first magnetic field sensing element comprises a planar Hall effect element and the second magnetic field sensing element comprises a vertical Hall effect element.
 3. The magnetic field sensor of claim 1, wherein the first magnetic field sensing element comprises a planar Hall effect element and the second magnetic field sensing element comprises a magnetoresistance element.
 4. The magnetic field sensor of claim 1, wherein a center of the first magnetic field sensing element is disposed along the first orthogonal axis.
 5. The magnetic field sensor of claim 4, wherein a center of second magnetic field sensing element is disposed along the first or second orthogonal axis.
 6. A magnetic field sensor for sensing a movement of an object along a path, a movement line tangent to the path, the magnetic field sensor comprising: a magnet, the magnet comprising a north pole, a south pole, and a magnet axis passing through the north pole and the south pole; a semiconductor substrate proximate to the magnet in a back biased arrangement and at a position between the object and the magnet, the semiconductor substrate having first and second major opposing surfaces, the magnet axis substantially perpendicular to the first opposing surface of the semiconductor substrate, the semiconductor substrate having first and second orthogonal axes on the first opposing surface of the substrate intersecting at a substrate point on the first surface of the substrate, wherein the magnet axis intersects the substrate point, wherein a projection of the movement line onto the first opposing surface of the semiconductor substrate is substantially parallel to the first orthogonal axis on the first surface of the substrate; a first magnetic field sensing element disposed on or under the first surface of the semiconductor substrate and disposed along the first or second orthogonal axis, wherein the first magnetic field sensing element comprises an axis of maximum sensitivity substantially perpendicular to the first opposing surface of the substrate; a second magnetic field sensing element disposed on or under the first surface of the semiconductor substrate and disposed along the first or second orthogonal axis, wherein the second magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate, wherein the axis of maximum sensitivity of the second magnetic field sensing element is substantially parallel to the first orthogonal axis, wherein the first magnetic field sensing element is not disposed over or under the second magnetic field sensing element relative to the first surface of the semiconductor substrate; a third magnetic field sensing element disposed on or under the first surface of the semiconductor substrate and disposed along the first or second orthogonal axis, wherein the third magnetic field sensing element comprises an axis of maximum sensitivity substantially perpendicular to the first opposing surface of the substrate; a fourth magnetic field sensing element disposed on or under the first surface of the semiconductor substrate and disposed along the first or second orthogonal axis, wherein the fourth magnetic field sensing element comprising an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate, wherein the axis of maximum sensitivity of the fourth magnetic field sensing element is substantially parallel to the first orthogonal axis; a first electronic circuit channel coupled to the first magnetic field sensing element and to the third magnetic field sensing element, the first electronic circuit channel operable to generate a first difference signal as a difference of signals generated by the first magnetic field sensing element and the third magnetic field sensing element, the first electronic circuit channel operable to generate the first difference signal having a first phase; and a second electronic circuit channel coupled to the second magnetic field sensing element and to the fourth magnetic field sensing element, the second electronic circuit channel operable to generate a second difference signal as a difference of signals generated by the second magnetic field sensing element and the fourth magnetic field sensing element, the second electronic circuit channel operable to generate the second difference signal having a second phase approximately +/− ninety degrees apart from the first phase regardless of a speed of the movement of the object, wherein a sign of the ninety degrees is indicative of a direction of the movement of the object.
 7. The magnetic field sensor of claim 6, wherein the first and third magnetic field sensing elements comprise planar Hall effect elements and the second and fourth magnetic field sensing elements comprise vertical Hall effect elements.
 8. The magnetic field sensor of claim 6, wherein the first and third magnetic field sensing elements comprise planar Hall effect elements and the second and fourth magnetic field sensing elements comprise magnetoresistance elements.
 9. The magnetic field sensor of claim 6, wherein centers of the first and third magnetic field sensing elements are equidistant from the substrate point.
 10. The magnetic field sensor of claim 9, wherein the centers of second and fourth magnetic field sensing elements are equidistant from the substrate point.
 11. The magnetic field sensor of claim 6, further comprising: a fifth magnetic field sensing element, disposed on the first surface of the semiconductor substrate, wherein the fifth magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate and substantially parallel to the second orthogonal axis; and a sixth magnetic field sensing element disposed on the first surface of the semiconductor substrate, wherein the sixth magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate and substantially parallel to the second orthogonal axis.
 12. The magnetic field sensor of claim 11, wherein the first and third magnetic field sensing elements comprise planar Hall effect elements and the second, fourth, fifth, and sixth magnetic field sensing elements comprise magnetoresistance elements.
 13. The magnetic field sensor of claim 11, wherein the first and third magnetic field sensing elements comprise planar Hall effect elements and the second, fourth, fifth, and sixth magnetic field sensing elements comprise vertical Hall effect elements.
 14. The magnetic field sensor of claim 11, wherein centers of the first and third magnetic field sensing elements are disposed along the first orthogonal axis and equidistant from the substrate point.
 15. The magnetic field sensor of claim 14, wherein the centers of second and fourth magnetic field sensing elements are disposed along the first orthogonal axis and equidistant from the substrate point.
 16. The magnetic field sensor of claim 14, wherein the centers of fifth and sixth magnetic field sensing elements are disposed along the second orthogonal axis and equidistant from the substrate point.
 17. The magnetic field sensor of claim 11, wherein directions of the axes of maximum sensitivities of the second, fourth, fifth and sixth magnetic field sensing elements are selected such that the second magnetic field sensing element and the fourth magnetic field sensing elements have greater responses to the movement of the object along the path than the fifth magnetic field sensing element and the sixth magnetic field sensing element.
 18. The magnetic field sensor of claim 11, wherein the first electronic circuit channel is coupled to the first magnetic field sensing element and to the third magnetic field sensing element, the first electronic circuit channel operable to generate a first difference signal as a difference of signals generated by the first magnetic field sensing element and the third magnetic field sensing element, the first electronic circuit channel operable to generate the first difference signal having a first phase, and wherein the second electronic circuit channel is coupled to the second magnetic field sensing element, to the fourth magnetic field sensing element, to the fifth magnetic field sensing element, and to the sixth magnetic field sensing element, the second electronic circuit channel operable to generate a second difference signal as a difference of signals generated by the second magnetic field sensing element and the fifth magnetic field sensing element, the second electronic circuit channel operable to generate a third difference signal as a difference of signals generated by the fourth magnetic field sensing element and the sixth magnetic field sensing element, and wherein the second electronic circuit channel is operable to generate a fourth difference signal as a difference between the second difference signal and the third difference signal, the second electronic circuit channel operable to generate the fourth difference signal having a second phase approximately +/− ninety degrees apart from the first phase, wherein a sign of the ninety degrees is indicative of a direction of the movement of the object. 